For the inverter market, APM has developed a full range of IRF products from planar, groove and SGT, which are benchmarked against traditional planar and trench IRF, as well as Infineon's SGT process platform with SGTS3, which are applicable and matched in all aspects. APM realizes the adaptation of the whole process coverage: plane process, trench process, SGTI three major process platforms, optimized product structure In the current state, it is the only power device semiconductor company in China that realizes the plane, groove and SGTI three major platforms are complete. Package form covers: TO247-3L, TO263-6L, TO220-3L

LED Driver Switching Power Supply Technical Principle

Working Mechanism:
The control IC drives the MOSFET to perform high-speed switching, converting DC into high-frequency AC for transformer isolation, thereby generating the required safety isolation voltage.

Key Technical Specifications:

• Input Voltage: 220V AC

• MOSFET Requirements:
  ✓ Breakdown voltage >650V (standard requirement)
  ✓ 700V 4th-gen VDMOS process (APM solution)
  ✓ Low C_ISS (input capacitance)
  ✓ Reduced R_DS(on) (optimized conduction loss)

Market-Driven Design Innovations:

1. Enhanced Voltage Tolerance

   • Addresses voltage fluctuations in international markets (±20% variation)

   • Compensates for transformer leakage inductance issues

2. Process Optimization

   • 15% lower FOM (Figure of Merit) vs 3rd-gen platforms

   • Switching frequency up to 200kHz

Application Advantages:
✓ Complies with IEC 61347-1 safety standards
✓ 92%+ system efficiency (at full load)
✓ Reduced EMI through optimized switching characteristics