IGBT

• Combines the gate control characteristics of a MOSFET with the low conduction loss of a BJT (Bipolar Junction Transistor).

• Features a four-layer (PNPN) structure, including a MOS gate, N- drift region, and P+ substrate, forming a bipolar conduction mechanism.

CoolSemi's IGBT power devices adopt a Trench Gate Field-Stop design, with the epitaxial layer thickness reduced to 60μm and V_CE(sat) as low as 1.45V, delivering performance comparable to Infineon's IFX6 series.