Longtech Planar-Gate Silicon Carbide MOSFET (SiC MOSFET) Product Line
Technology Innovations:
Small cell design with optimized JFET implantation
Advanced substrate thinning technology (thickness <100μm)
Superior termination structure with field-limiting rings
Performance Achievements:
✓ Best-in-class R<sub>DS(on)</sub> (15mΩ·cm<sup>2</sup> typical)
✓ Ultra-low leakage current (<1μA at 1200V)
✓ Robust breakdown voltage (≥95% of theoretical limit)
✓ Optimal performance trade-off between key parameters
Technical Specifications:
| Parameter | Value | Advantage |
|---|
| R<sub>DS(on)</sub> | 25mΩ@1200V | 30% lower than industry average |
| I<sub>leakage</sub> | 0.5μA@25°C | Industry-leading |
| V<sub>BR</sub> | 1300V min | 5% margin over rated voltage |
Key Features:
Cell Pitch <5μm for high current density
Gate Oxide Reliability >100 years at 175°C
Avalanche Energy 300mJ for ruggedness
(Product qualified for AEC-Q101 Grade 0 and JEDEC47 standards)
