Longtech SGT MOSFET Series
Technology Highlights:
Utilizes optimized trench shielded-gate design and advanced process technology
Features ultra-low gate charge (Q<sub>G</sub>) and fast soft recovery characteristics
Voltage coverage: 30V to 200V
Key Performance Advantages:
✓ 40% lower Q<sub>G</sub> vs conventional trench MOSFETs
✓ Reverse recovery time (t<sub>rr</sub>) <100ns
✓ FOM (R<sub>DS(on)</sub>×Q<sub>G</sub>) reduced by 35%
Target Applications:
Electrical Characteristics:
| Parameter | Value | Advantage |
|---|
| R<sub>DS(on)</sub> | 2mΩ@30V | Best-in-class |
| Q<sub>G</sub> | 15nC | Faster switching |
| t<sub>rr</sub> | 85ns | Reduced EMI |
*(Available in DFN3.3x3.3, TO-252 and other industry-standard packages)*
