Coolsemi-Pinxin Electronics (Shenzhen) Co., Ltd.

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CRSS042N10N

IPM-CS5755AT

ZMJ Semi

Automotive-grade MOSFET

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Lonten Semi

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Medium/Low Voltage SGT MOSFET

SiC MOSFET

IGBT

APM Semi

MOSFET

TALE SEMI

TP1E Series - Single-Phase High Voltage Half-Bridge

TS8N Series - Fully Integrated

TP3S Series - Three-Phase High-Voltage Full Bridge

RPCOM

Cellular IoT Chip R8018VR

Wired IoT chip RPC2178

Satellite Communication Chip R801TT

Siflower

Gateway Chip SF21X2880

Gateway Chip SF21H8898

YuGe

4G Module CLM920_AC5 - Technical Specifications

NB-IoT Module

DTU CLP600

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ASIC

IC

Power devices

MCU

IPM

Coolsemi

IPM

IGBT

MOSFET

SiC SBD

SiC MOSFET

GaN HEMT

CR Micro

Power Devices

CRSS042N10N

IPM-CS5755AT

ZMJ Semi

Automotive-grade MOSFET

MOSFET

Lonten Semi

MOSFET

Medium/Low Voltage SGT MOSFET

SiC MOSFET

IGBT

APM Semi

MOSFET

TALE SEMI

TP1E Series - Single-Phase High Voltage Half-Bridge

TS8N Series - Fully Integrated

TP3S Series - Three-Phase High-Voltage Full Bridge

RPCOM

Cellular IoT Chip R8018VR

Wired IoT chip RPC2178

Satellite Communication Chip R801TT

Siflower

Gateway Chip SF21X2880

Gateway Chip SF21H8898

YuGe

4G Module CLM920_AC5 - Technical Specifications

NB-IoT Module

DTU CLP600

CR Micro

Fortior

ASIC

IC

Power devices

MCU

IPM

Coolsemi

IPM

IGBT

MOSFET

SiC SBD

SiC MOSFET

GaN HEMT

CR Micro

Power Devices

CRSS042N10N

IPM-CS5755AT

ZMJ Semi

Automotive-grade MOSFET

MOSFET

Lonten Semi

MOSFET

Medium/Low Voltage SGT MOSFET

SiC MOSFET

IGBT

APM Semi

MOSFET

TALE SEMI

TP1E Series - Single-Phase High Voltage Half-Bridge

TS8N Series - Fully Integrated

TP3S Series - Three-Phase High-Voltage Full Bridge

RPCOM

Cellular IoT Chip R8018VR

Wired IoT chip RPC2178

Satellite Communication Chip R801TT

Siflower

Gateway Chip SF21X2880

Gateway Chip SF21H8898

YuGe

4G Module CLM920_AC5 - Technical Specifications

NB-IoT Module

DTU CLP600

ZMJ Semi

Fortior

ASIC

IC

Power devices

MCU

IPM

Coolsemi

IPM

IGBT

MOSFET

SiC SBD

SiC MOSFET

GaN HEMT

CR Micro

Power Devices

CRSS042N10N

IPM-CS5755AT

ZMJ Semi

Automotive-grade MOSFET

MOSFET

Lonten Semi

MOSFET

Medium/Low Voltage SGT MOSFET

SiC MOSFET

IGBT

APM Semi

MOSFET

TALE SEMI

TP1E Series - Single-Phase High Voltage Half-Bridge

TS8N Series - Fully Integrated

TP3S Series - Three-Phase High-Voltage Full Bridge

RPCOM

Cellular IoT Chip R8018VR

Wired IoT chip RPC2178

Satellite Communication Chip R801TT

Siflower

Gateway Chip SF21X2880

Gateway Chip SF21H8898

YuGe

4G Module CLM920_AC5 - Technical Specifications

NB-IoT Module

DTU CLP600

Lonten Semi

Fortior

ASIC

IC

Power devices

MCU

IPM

Coolsemi

IPM

IGBT

MOSFET

SiC SBD

SiC MOSFET

GaN HEMT

CR Micro

Power Devices

CRSS042N10N

IPM-CS5755AT

ZMJ Semi

Automotive-grade MOSFET

MOSFET

Lonten Semi

MOSFET

Medium/Low Voltage SGT MOSFET

SiC MOSFET

IGBT

APM Semi

MOSFET

TALE SEMI

TP1E Series - Single-Phase High Voltage Half-Bridge

TS8N Series - Fully Integrated

TP3S Series - Three-Phase High-Voltage Full Bridge

RPCOM

Cellular IoT Chip R8018VR

Wired IoT chip RPC2178

Satellite Communication Chip R801TT

Siflower

Gateway Chip SF21X2880

Gateway Chip SF21H8898

YuGe

4G Module CLM920_AC5 - Technical Specifications

NB-IoT Module

DTU CLP600

APM Semi

Fortior

ASIC

IC

Power devices

MCU

IPM

Coolsemi

IPM

IGBT

MOSFET

SiC SBD

SiC MOSFET

GaN HEMT

CR Micro

Power Devices

CRSS042N10N

IPM-CS5755AT

ZMJ Semi

Automotive-grade MOSFET

MOSFET

Lonten Semi

MOSFET

Medium/Low Voltage SGT MOSFET

SiC MOSFET

IGBT

APM Semi

MOSFET

TALE SEMI

TP1E Series - Single-Phase High Voltage Half-Bridge

TS8N Series - Fully Integrated

TP3S Series - Three-Phase High-Voltage Full Bridge

RPCOM

Cellular IoT Chip R8018VR

Wired IoT chip RPC2178

Satellite Communication Chip R801TT

Siflower

Gateway Chip SF21X2880

Gateway Chip SF21H8898

YuGe

4G Module CLM920_AC5 - Technical Specifications

NB-IoT Module

DTU CLP600

TALE SEMI

Fortior

ASIC

IC

Power devices

MCU

IPM

Coolsemi

IPM

IGBT

MOSFET

SiC SBD

SiC MOSFET

GaN HEMT

CR Micro

Power Devices

CRSS042N10N

IPM-CS5755AT

ZMJ Semi

Automotive-grade MOSFET

MOSFET

Lonten Semi

MOSFET

Medium/Low Voltage SGT MOSFET

SiC MOSFET

IGBT

APM Semi

MOSFET

TALE SEMI

TP1E Series - Single-Phase High Voltage Half-Bridge

TS8N Series - Fully Integrated

TP3S Series - Three-Phase High-Voltage Full Bridge

RPCOM

Cellular IoT Chip R8018VR

Wired IoT chip RPC2178

Satellite Communication Chip R801TT

Siflower

Gateway Chip SF21X2880

Gateway Chip SF21H8898

YuGe

4G Module CLM920_AC5 - Technical Specifications

NB-IoT Module

DTU CLP600

RPCOM

Fortior

ASIC

IC

Power devices

MCU

IPM

Coolsemi

IPM

IGBT

MOSFET

SiC SBD

SiC MOSFET

GaN HEMT

CR Micro

Power Devices

CRSS042N10N

IPM-CS5755AT

ZMJ Semi

Automotive-grade MOSFET

MOSFET

Lonten Semi

MOSFET

Medium/Low Voltage SGT MOSFET

SiC MOSFET

IGBT

APM Semi

MOSFET

TALE SEMI

TP1E Series - Single-Phase High Voltage Half-Bridge

TS8N Series - Fully Integrated

TP3S Series - Three-Phase High-Voltage Full Bridge

RPCOM

Cellular IoT Chip R8018VR

Wired IoT chip RPC2178

Satellite Communication Chip R801TT

Siflower

Gateway Chip SF21X2880

Gateway Chip SF21H8898

YuGe

4G Module CLM920_AC5 - Technical Specifications

NB-IoT Module

DTU CLP600

Siflower

Fortior

ASIC

IC

Power devices

MCU

IPM

Coolsemi

IPM

IGBT

MOSFET

SiC SBD

SiC MOSFET

GaN HEMT

CR Micro

Power Devices

CRSS042N10N

IPM-CS5755AT

ZMJ Semi

Automotive-grade MOSFET

MOSFET

Lonten Semi

MOSFET

Medium/Low Voltage SGT MOSFET

SiC MOSFET

IGBT

APM Semi

MOSFET

TALE SEMI

TP1E Series - Single-Phase High Voltage Half-Bridge

TS8N Series - Fully Integrated

TP3S Series - Three-Phase High-Voltage Full Bridge

RPCOM

Cellular IoT Chip R8018VR

Wired IoT chip RPC2178

Satellite Communication Chip R801TT

Siflower

Gateway Chip SF21X2880

Gateway Chip SF21H8898

YuGe

4G Module CLM920_AC5 - Technical Specifications

NB-IoT Module

DTU CLP600

YuGe

Fortior

ASIC

IC

Power devices

MCU

IPM

Coolsemi

IPM

IGBT

MOSFET

SiC SBD

SiC MOSFET

GaN HEMT

CR Micro

Power Devices

CRSS042N10N

IPM-CS5755AT

ZMJ Semi

Automotive-grade MOSFET

MOSFET

Lonten Semi

MOSFET

Medium/Low Voltage SGT MOSFET

SiC MOSFET

IGBT

APM Semi

MOSFET

TALE SEMI

TP1E Series - Single-Phase High Voltage Half-Bridge

TS8N Series - Fully Integrated

TP3S Series - Three-Phase High-Voltage Full Bridge

RPCOM

Cellular IoT Chip R8018VR

Wired IoT chip RPC2178

Satellite Communication Chip R801TT

Siflower

Gateway Chip SF21X2880

Gateway Chip SF21H8898

YuGe

4G Module CLM920_AC5 - Technical Specifications

NB-IoT Module

DTU CLP600
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Agent product

Agent product

IPM

Intelligent Power Module (IPM) integrates a dedicated control IC with driver circuits and protection circuits, enabling more compact and simplified peripheral circuit design. The optimized performance matching between the control IC and power chips enhances module reliability and stability, while ensuring faster and more precise protection response.

Application scope： New Energy Data Centers Smart Home Appliances Consumer Electronics
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IGBT

IGBT（Insulated Gate Bipolar Transistor，简写IGBT）功率器件与VDMOS的差别在于n外延层下面不是n+层而是p+层。导通时在n型漂移区产生电导调制效应，大幅降低导通压降。

Application scope：新能源数据中心智能家电消费电子
Explore more

MOSFET

CoolSemi's SGT-MOSFET Power Devices Featuring an ultra-deep trench design with shielded gate connected to source, this innovative structure effectively: Eliminates majority of Qgd charge Significantly reduces Miller capacitance Enhances switching speed Lowers switching losses

Application scope：New Energy Data Centers Consumer Electronics Smart Home Appliances
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SiC SBD

Silicon Carbide Diodes (Schottky Barrier Diode, SBD) demonstrate significant advantages over conventional silicon diodes, including: Higher blocking voltage capability Near-zero reverse recovery charge Superior thermal stability Temperature-independent reverse recovery characteristics

Application scope： New Energy Data Centers Consumer Electronics Smart Home Appliances
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SiC MOSFET

Silicon Carbide MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), leveraging the material properties of silicon carbide, exhibit lower switching losses and higher operating frequencies, making them highly suitable for power electronics applications.

Application scope：nergy Storage Power Supplies · Smart Home Appliances · Consumer Electronics · Data Centers
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GaN HEMT

Gallium nitride high electron mobility transistor (GaN HEMT) devices use a pGaN architecture with a constant-off feature that offers an order of magnitude lower gate and output charge compared to their silicon (Si) counterparts, which, combined with a near-zero reverse recovery charge, can support simpler topologies and achieve higher system efficiency

Application scope：Energy Storage Power Supplies · Smart Home Appliances · Consumer Electronics · Data Centers
Explore more

Telephone：(0755) 8297-4436

Address: 304C, Block B, Garden City Digital Building, No. 1079 Nanhai Avenue, Nanshan District, Shenzhen, Guangdong, China

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