Longtech Semiconductor MOSFET Series Technology Highlights: Utilizes Deep Trench Technology and Multi-epitaxial Process Delivers ultra-low RDS(on) and reduced gate charge (QG) Cuts conduction losses by 30% and switching losses by 40% vs. planar MOSFETs Key Benefits: ✓ 98.5% peak efficiency in typical applications ✓ 50% higher power density than conventional solutions ✓ Optimized for 500kHz+ high-frequency switching Target Applications: Server/telecom power supplies (80Plus Titanium) EV onboard chargers (OBC) Solar microinverters Performance Data: Parameter Value Advantage RDS(on) 0.9mΩ@10V 25% lower than competitors QG 28nC Fastest switching in class FOM (RDS(on)×QG) 25mΩ·nC Industry-leading (Note: All products qualified for AEC-Q101 automotive grade and JEDEC47 industrial reliability standards)
Longtech SGT MOSFET Series Technology Highlights: Utilizes optimized trench shielded-gate design and advanced process technology Features ultra-low gate charge (QG) and fast soft recovery characteristics Voltage coverage: 30V to 200V
Longtech Planar-Gate Silicon Carbide MOSFET (SiC MOSFET) Product Line
Longtech IGBT Product Series Technical Specifications Core Technologies: Advanced Field-Stop Technology with trench gate structure IEGT-Enhanced Design for optimized conduction characteristics
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